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datashee t product structure silicon monolithic integrated circuit this product is not designed for pr otection against radioactive rays 1/31 tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 14 ? 001 23. jun. 2016 rev.002 power supply ic series for tft-lcd panels BD81842MUV-M general description the BD81842MUV-M is a power management ic for tft-lcd panels which are used in car navigation, in-vehicle center panel, and instrument cluster. incorporates high-power fet with low on resistance for large currents that employ high-power packages, thus driving large current loads while suppressing the generation of heat. a charge pump controller is incorporated as well, thus greatly reducing the number of application components. also gate shading function is included. key specifications ? input voltage range : 2.0v to 5.5v ? avdd output voltage range : 6.0v to 18v ? src output voltage range : 12v to 34v ? vcom output current : 200ma (typ.) ? oscillator frequency : 2.1mhz (typ.) ? operating temperature range : -40 to +105 special characteristics ? fb regulation voltage : 3% (ta=-40 105 ) ? oscillator frequency : 10.5% (ta=-40 105 ) typical application circuit (top view) applications tft-lcd panels which are used in car navigation, in-vehicle center panel, and instrument cluster. features ? aec-q100 qualified (note 1) ? boost dc/dc converter; 18 v / 2.5 a switch current. ? switching frequency: 2.1 mhz ? operational amplifier (short current 200ma) ? incorporates positive / negative charge-pump controllers. ? gate shading function ? protection circuits: under voltage lockout protection circuit thermal shutdown circuit (latch mode) over current protection circuit (avdd) timer latch mode short circuit protection (avdd src /vgl) over / under voltage protection circuit for boost dc/dc output no scp time included (185ms from uvlo-off) (note1: grade 2) package w(typ.) x d(typ.) x h(max.) vqfn24sv4040 4.0mm x 4.0mm x 1.0mm automotive panel power management ic ly sr gsout resw pgn pgn fb omp rstin agn2 vin rn tl rst fbp fbn vref inp inn vom agn1 av rp sr gsout 1k vin av 10v/0.5amax tk slf7055t-100m2r5(10h,2.5a) vin 3.3v vgl -7.1v/20ma max tl sr vom 5.5v rst rsx301la-30 10uf 10uf 10uf 10uf 10uf 91k 13k 24k 2.2nf 10k 10k 10k 1uf 120k 1uf 16k 0.22f 1uf 0.1uf 10k 150k 1uf 0.1uf 0.1uf 0.1uf 1uf 22k 18k 33nf av av a227 a227 a227 20v/20ma max 12 3 4 5 6 78 910 1112 1817 16 15 14 13 24 23 22 21 20 19 figure 1. application circuit downloaded from: http:///
datasheet d a t a s h e e t 2/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 contents general descr iption ........................................................................................................... ....................................................... 1 key specifi cations ............................................................................................................ ........................................................ 1 special charact eristics ....................................................................................................... ...................................................... 1 applications .................................................................................................................. ............................................................. 1 featur es ...................................................................................................................... ............................................................... 1 pin configuration ............................................................................................................. ......................................................... 3 pin descrip tions .............................................................................................................. .......................................................... 3 block di agram ................................................................................................................. .......................................................... 4 main block function ........................................................................................................... ...................................................... 5 absolute maxi mum rati ngs ...................................................................................................... ............................................... 6 thermal resi stance ............................................................................................................ ...................................................... 6 recommended oper ating range ................................................................................................... .......................................... 6 electrical char acteristics .................................................................................................... ...................................................... 7 electrical charact eristic curves .............................................................................................. ................................................. 9 application example ........................................................................................................... .................................................... 15 power sequ ence ................................................................................................................ ..................................................... 16 protect op eration ............................................................................................................. ....................................................... 17 reset func tion ................................................................................................................ ........................................................ 17 gate shadi ng function ......................................................................................................... .................................................. 18 how to select parts of application ............................................................................................ ............................................. 19 pcb layout guide .............................................................................................................. ..................................................... 24 i/o equivalent ci rcuit diag rams ............................................................................................... .............................................. 26 operation not es ............................................................................................................... ....................................................... 27 ordering in formation .......................................................................................................... .................................................... 29 marking di agrams .............................................................................................................. ..................................................... 29 physical dimension, tape and reel information ................................................................................. ................................. 30 revision hi story .............................................................................................................. ........................................................ 31 downloaded from: http:///
datasheet d a t a s h e e t 3/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 pin configuration (top view) pin descriptions pin no. pin name function 1 inp vcom amplifier input + 2 inn vcom amplifier input - 3 vcom vcom amplifier output 4 agnd1 ground 5 avdd supply voltage input for vcom, charge pump 6 drp drive pin of the positive charge pump 7 drn drive pin of the negative charge pump 8 ctl high voltage switch control pin 9 rst open drain reset output 10 fbp positive charge pump feed back 11 fbn negative charge pump feed back 12 vref internal reference voltage output 13 vin supply voltage input for pwm 14 agnd2 ground 15 rstin reset comparator input 16 comp boost error amplifier output 17 fb boost error amplifier input 18 pgnd1 boost fet ground 19 pgnd2 boost fet ground 20 sw boost fet drain 21 re gate high voltage fall set pin 22 gsout gate high voltage output set pin 23 src gate high voltage input set pin 24 dly gsout delay adjust pin 23 22 21 20 19 1 2 3 4 5 6 18 17 16 15 14 13 BD81842MUV-M drn ctl rst fbp fbn vref inp inn vcom agnd1 avdd drp pgnd1 fb comp rstin agnd2 vin 7 8 9 10 11 12 24 dly src gsout re sw pgnd2 figure 2. pin configuration downloaded from: http:///
datasheet d a t a s h e e t 4/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 block diagram figure 3. block diagram va fata a a a a a va a vin 0.265v (1.25v) vref fall 1.25v fb error amplifier omparator sw pgn1 av av av agn1 agn1 rn rp vom agn1 srrst agn2 1.25v av 1.25v 0.265v omp fbnfbp inn inp ly tl re gsout rstin pgn2 downloaded from: http:///
datasheet d a t a s h e e t 5/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 main block function ? boost converter a controller circuit for dc/dc boosting. the switching duty is controlled so that the feedback voltage fb is set to 1.25 v (typ.). a soft start operates at the time of starting. ? positive charge pump a controller circuit for the positive-side charge pump. the switching amplitude is controlled so that t he feedback voltage fbp will be set to 1.25 v (typ.). ? negative charge pump a controller circuit for the negative-side charge pump. the switching amplitude is contro lled so that the feedback voltage fbn will be set to 0.265 v (typ.). ? gate shading controller a controller circuit for p-mos fet switch the gsout switching synchronize with ctl input. please input voltage below vin to ctl. when vin drops below uvlo threshold or rst=lo w(=rstin<1.25v), gsout is pulled high(=src). ? vcom 1-channel operational amplifier block. ? reset an open-drain output(rst) refer from rstin voltage(up to threshold voltage 1.25v). rst keeps high(need a pull-up resistor connect ed to vin) dulling to 185ms from start-up. ? vref a block that generates internal reference voltage of 1.25v (typ.). vref is keep high when the thermal/shor t-current-protection shutdown circuit. ? tsd/uvlo/ovp/uvp the thermal shutdown circuit is shut down at an ic internal temperature of 160 . the under-voltage lockout protection circuit shuts down the ic when the vin is 1.85 v (typ.) or below. the over-voltage protection circuit when the avdd is 20 v (typ.) or over. the under-voltage protection circuit when the avdd is 1.3 v (typ.) or under ? start-up controller a control circuit for the starting sequence. controls to start in order of vin ? vgl ? avdd ? src (please refer to fig.27 of 16 page for details.) downloaded from: http:///
datasheet d a t a s h e e t 6/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 absolute maximum ratings(ta= 25 ) parameter synbol limits unit min typ max power supply voltage vin -0.3 - 7 v output pin avdd, sw, drp, drn, vcom -0.3 - 20 v src, gsout, re -0.3 - 36 v rst, comp, vref -0.3 - 7 v src C gsout -0.3 - 40 v input pin fb, fbp, fbn -0.3 - vin+0.3 v inn, inp -0.3 - 20 v function pin voltage rstin, dly, ctl -0.3 vin+0.3 v maximum junction temperature tjmax - - 150 operating temperature range topr -40 - 105 storage temperature range tstg -55 - 150 thermal resistance (note 2) parameter symbol thermal resistance (typ) unit 1s (note 4) 2s2p (note 5) vqfn24sv4040 junction to ambient ja 150.6 37.9 /w junction to top characterization parameter (note 3) jt 20 9 /w (note 2)based on jesd51-2a(still-air). (note 3)the thermal characterization parameter to repo rt the difference between junction temperature and the temperature at the top center of the outside surface of the component package. (note 4)using a pcb board based on jesd51-3. layer number of measurement board material board size single fr-4 114.3mm x 76.2mm x 1.57mmt top copper pattern thickness footprints and traces 70m (note 5)using a pcb board based on jesd51-5, 7. layer number of measurement board material board size thermal via (note 6) pitch diameter 4 layers fr-4 114.3mm x 76.2mm x 1.6mmt 1.20mm 0.30mm top 2 internal layers bottom copper pattern thickness copper pattern thickness copper pattern thickness footprints and traces 70m 74.2 mm x 74.2mm 35m 74.2mm x 74.2mm 70m (note 6) this thermal via connects with the copper pattern of all layers. recommended operating range parameter symbol min typ max unit power supply voltage vin 2.0 - 5.5 v output pin avdd 6 - 18 v src 12 - 34 v downloaded from: http:///
datasheet d a t a s h e e t 7/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 electrical characteristics (unless otherwise specified vin = 3.3v, avdd = 10v and ta=25 ) parameter symbol limits unit condition min typ max general circuit current i vin - 1.2 3 ma no switching ta = - 4 0 105 under voltage lockout threshold v uvlo 1.75 1.85 1.95 v vin rising ta = - 4 0 105 internal reference output voltage vref 1.225 1.25 1.275 v no load ta = 2 5 1.2125 1.25 1.2875 v no load ta = - 4 0 105 thermal shutdown (rising) tsd - 160 - junction temp duration to trigger fault condition t scp 51 63 75 ms fb , fbp or fbn below threshold boost converter (avdd) fb regulation voltage v fb 1.2375 1.25 1.2625 v ta=25 1.2125 1.25 1.2875 v ta=-40 105 fb fault trip level v tl_fb 0.9 1.0 1.1 v fb falling fb input bias current i fb - 0.1 2 a fb= 1.5v ta = - 4 0 105 sw leakage current i sw_l - 0 10 a sw=20v ta = - 4 0 105 maximum switching duty cycle m duty 85 90 95 % fb= 1.0v sw on-resistance r sw - 200 250 m sw= 200ma sw current limit i swlim 2.5 4.5 6.5 a ta=-40 105 over voltage protection v ovp 18 20 22 v avdd rising under voltage protection v uvp 1 1.3 3 v avdd falling boost soft start time t ss_fb 12.5 15.5 18.5 ms ta=-40 105 oscillator frequency f sw 1.9 2.1 2.3 mhz ta=25 1.88 2.1 2.32 mhz ta=-40 105 reset rst output low voltage v rst - 0.05 0.2 v rst =1.2ma rstin threshold voltage v th_l 1.18 1.25 1.32 v rstin rising ta = - 4 0 105 rstin input current i rstin - 0 6 a rstin=0 to vin-0.3 ta = - 4 0 105 rst blanking time t no_scp 165 185 205 ms no scp zone ta = - 4 0 105 operational amp rifer input range v range 0 - avdd v offset voltage v os - 2 15 mv inp= 5.0v input current i inp - 0 3 a inp= 5.0v ta = - 4 0 105 output swing voltage (inp= 5.0v) v oh - 5.03 5.06 v vcom = +50ma v ol 4.94 4.97 - v vcom = -50ma short circuit current i sht_vcom - 200 400 ma inp= 5.0v slew rate sr 10 40 250 v/us downloaded from: http:///
datasheet d a t a s h e e t 8/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 electrical characteristics (unless otherwise specified vin = 3.3v, avdd = 10v and ta=25 ) (continued) parameter symbol limits unit condition min typ max negative charge pump driver (vgl) fbn regulation voltage v fbn 242 265 288 mv ta=25 239 265 291 mv ta=-40 105 fbn fault trip level v tl_fbn 400 450 500 mv fbn rising fbn input bias current i fbn - 0.1 15 a fbn= 0.1v ta = - 4 0 105 oscillator frequency f cpn 425 525 625 khz ta=-40 105 drn leakage current i drn_l - 0 10 a fbn=1.0v ta = - 4 0 105 positive charge pump driver (src) fbp regulation voltage v fbp 1.2325 1.25 1.2675 v ta=25 1.2125 1.25 1.2875 v ta=-40 105 fbp fault trip level v tl_fbp 0.95 1.0 1.05 v fbp falling fbp input bias current i fbp - 0.1 15 a fbp= 1.5v ta = - 4 0 105 oscillator frequency f cpp 425 525 625 khz ta=-40 105 drp leakage current i drp_l - 0 10 a fbp= 1.5v ta = - 4 0 105 soft-start time t ssp 3.2 3.9 4.6 ms ta=-40 105 gate shading function (gsout) dly source current i dly 3.5 5 6.5 a ta=-40 105 dly threshold voltage v tl_dly 0.85 1.25 1.65 v dl y falling ta = - 4 0 105 ctl input voltage high v in_h vin 0.65 - vin v depend on vin ta = - 4 0 105 ctl input voltage low v in_l 0 - vin 0.25 v depend on vin ta = - 4 0 105 ctl input bias current i ctl - 0 6 a rstin=0 to vin-0.3 ta = - 4 0 105 propagation delay time (rising) t gs_r - 100 200 ns src= 25v propagation delay time (falling) t gs_f - 100 200 ns src= 25v src -gsout on resistance r gs_h - 15 30 dly = 1.5v gsout-re on resistance r gs_m - 30 100 dly = 1.5v gsout-gnd on resistance r gs_l - 2.5 5.0 k dly = 1.0v this product is not designed for protection against radio active rays. downloaded from: http:///
datasheet d a t a s h e e t 9/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 electrical characteristic curves (reference data) (unless otherwise specified vin = 3.3v, avdd = 10v and ta=25 ) figuire 4. circuit current (no switching) figure 5. circuit current (switching) figure 6. dependent on temperature frequency figure 7. dependent on input voltage frequency downloaded from: http:///
datasheet d a t a s h e e t 10/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 electrical characteristic curves (reference data) (unless otherwise specified vin = 3.3v, avdd = 10v and ta=25 ) figure 8. vref line regulation figure 9. vref load regulation figure 10. boost converter efficiency figure 11. comp v.s.duty vin=3.3v avdd=10.0v fsw=2.121mhz vgh,vgl noload downloaded from: http:///
datasheet d a t a s h e e t 11/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 electrical characteristic curves (reference data) (unless otherwise specified vin = 3.3v, avdd = 10v and ta=25 ) figure 12. comp sink current figure 13. comp source current figure 14. load transient response falling figure 15. load transient response rising iavdd iavdd avdd avdd downloaded from: http:///
datasheet d a t a s h e e t 12/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 electrical characteristic curves (reference data) C continued (unless otherwise specified vin = 3.3v, avdd = 10v and ta=25 ) 0.001 0.01 0.1 1 10 _y [f] y t [] inp inn=vcom inp inn=vcom figure 16. vcom slew rate rising figure 17. vcom slew rate falling figure 18. c_dly vs. delay time downloaded from: http:///
datasheet d a t a s h e e t 13/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 electrical characteristic curves (reference data) C continued (unless otherwise specified vin = 3.3v, avdd = 10v and ta=25 ) ctl gsout (re pull down to avdd) ctl gsout (re pull down to gnd) figure 19. gate shading wave form1 figure 20. gate shading wave form2 figure 21. power on sequence1 (main output) figure 22. power off sequence1 (main output) vin avdd src vgl vin avdd src vgl downloaded from: http:///
datasheet d a t a s h e e t 14/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 electrical characteristic curves (reference data) C continued (unless otherwise specified vin = 3.3v, avdd = 10v and ta=25 ) figure 25. power on sequence2 (ctl=signal, re pull down to avdd) figure 23. power off sequence2 (r_rst_u=10k,r_rst_d=10k) vin dly gsout ctl vin src gsout avdd rst figure 24. power off sequence3 (r_rst_u=10k,r_rst_d=open) vin src gsout avdd rst downloaded from: http:///
datasheet d a t a s h e e t 15/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 application example ly sr gsout resw pgn pgn fb omp rstin agn2 vin rn tl rst fbp fbn vref inp inn vom agn1 av rp sr gsout 1k vin av 10v/0.5amax tk slf7055t-100m2r5(10h,2.5a) vin 3.3v vgl -7.1v/20ma max tl sr vom 5.5v rst rsx301la-30 10uf 10uf 10uf 10uf 10uf 91k 13k 24k 2.2nf 10k 10k 10k 1uf 120k 1uf 16k 0.22f 1uf 0.1uf 10k 150k 1uf 0.1uf 0.1uf 0.1uf 1uf 22k 18k 33nf av av a227 a227 a227 20v/20ma max 12 3 4 5 6 78 910 1112 1817 16 15 14 13 24 23 22 21 20 19 figure 26. application example application circuit components list (vin=3.3 v, avdd=10v, src=20v, vgl=-7.1v, vcom=5v) parts name value unit company parts number min typ max c_vin 0.47 1.0 - uf tdk cga3e1x7r1c105m r_vin 1 10 20 ? rohm mcr03 c_pin1 4.7 10 - uf tdk cga5l1x7r1c106m c_pin2 4.7 10 - uf tdk cga5l1x7r1c106m c_avd1 4.7 10 22 uf tdk cga5l1x7r1e106m c_avd2 4.7 10 22 uf tdk cga5l1x7r1e106m l_avd 4.7 10 22 uh tdk ltf5022t-100m1r3-h d_avd - 30/5 - v/a rohm rb080l-30dd r_avd_u 6.8 91 330 k ? rohm mcr03 r_avd_d 6.8 13 330 k ? rohm mcr03 r_cmp - 24 - k ? rohm mcr03 c_cmp - 2200 - pf tdk cga3e2x7r1h222m r_rst_u - 10 - k ? rohm mcr03 r_rst_d - 10 - k ? rohm mcr03 r_rst - 10 - k ? rohm mcr03 c_rst - 1.0 - uf tdk cga3e1x7r1c105m c_dly 10 33 100 nf tdk cga3e2x7r1h333m r_re 0.2 1.0 5.1 k ? rohm mcr03 c_avdd 0.047 0.1 - uf tdk cga3e2x7r1h104m c_ref 0.1 0.22 0.47 uf tdk cga3e2x7r1c224m when resistor cannot be put near the inp, and concerned about the noise, please insert a capacitor. (0.1uf-1uf) when insert r_vin, vin strengthens the tolerance for the power supply noise by a filter effect. downloaded from: http:///
datasheet d a t a s h e e t 16/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 parts name value unit company parts number min typ max c_vgl 0.47 1.0 10 uf tdk cga3e1x7r1c105m c_fcn 0.047 0.1 1.0 uf tdk cga3e2x7r1h104m d_cpn - 80/100 - v/ma rohm dan217umfh r_vgl_u 6.8 120 330 k ? rohm mcr03 r_vgl_d 6.8 16 330 k ? rohm mcr03 c_vgl_u 10 100 4700 pf tdk cga3e2np01h101j c_src1 0.47 1.0 10 uf tdk cga4j3x7r1h105m c_fcp1 0.047 0.1 1.0 uf tdk cga3e2x7r1h104m c_fcp2 0.047 0.1 1.0 uf tdk cga3e2x7r1h104m c_cpp 0.047 0.1 1.0 uf tdk cga3e2x7r1h104m d_cpp1 - 80/100 - v/ma rohm dan217umfh d_cpp2 - 80/100 - v/ma rohm dan217umfh r_src_u 6.8 150 330 k ? rohm mcr03 r_src_d 6.8 10 330 k ? rohm mcr03 c_src_u 10 100 4700 pf tdk cga3e2np01h101j c_src2 0.47 1.0 10 uf tdk cga4j3x7r1h105m r_com_u 6.8 51 330 k ? rohm mcr03 r_com_d 6.8 51 330 k ? rohm mcr03 c_vcom 0.1 1.0 10 uf tdk cga3e1x7r1e105m please set in consideration of temper ature properties and dc bias properties not to become less than the minimum. comp parts and the coil need adjustment by output voltage and load. please consider it based on enough evaluations with the a ctual model. power sequence figure 27. power sequence t ss _ fb =15.5ms t ssp =3.9ms 185ms dly=1.25 no scp zone before vin input is entered, ctl downloaded from: http:///
datasheet d a t a s h e e t 17/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 protect operation ? vin uvlo avdd src vgl falling (typ.) 1.65v rising (typ.) 1.85v action all channels shut-down. start-up sequence resets. ? thermal shutdown avdd src vgl threshold (typ.) 160 action all channels are latched in shut-down condit ion as soon as detecting thermal shutdown. for recovery, power supply should be inputted under uvlo voltage. ? over voltage protection avdd threshold (typ.) 20v action stop switching of avdd. ? under voltage protect avdd threshold (typ.) 1.3v action stop switching of avdd. ? over current protect avdd threshold (min.) 2.5a action stop switching of avdd. ? short circuit protect avdd src vgl threshold (typ.) avdd x 0.8 src x 0.8 vgl x 0.8 action all channels are latched in shut-down condition af ter 63msec(typ.) detecting short circuit protect in any channel. for recovery, power supply should be inputted under uvlo voltage. reset function 1.25v(vref) rstin agnd2 rst t_con after uvlo release, 185msec or less ? low since 185msec ? high rst_en fig.28 reset explanation the rst is set to low when the rstin voltage is less than 1.25v and is set to high (pulled-up by a resistor to vin) when the rstin voltage is greater than or equal to 1.25v. however, during the time when power supply is on for 185ms (typ), rst is held high regardless of rstin voltage. gate shading function is activated when rst_en is high. w hen rstin is low, the gate shading function cannot be used. if the gate shading function will not be used, the src, re, and ctl must be pulled-down by a resistor or connected to gnd. downloaded from: http:///
datasheet d a t a s h e e t 18/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 gate shading function fig.29 gate shading explanation to control the gate shading output (g sout) by the ctl input, the rstin and dly pin voltages must be set greater than 1.25v. if the dly pin is left open, the dly voltage immediately becomes high (great er than 1.25v) when the power supply is turned on. to add a delay time (t_delay) before dly voltage becomes high, connect a capacitor (c_ dly ) to the dly pin the delay time (t_delay) can be calculated using the following formula. [sec] 5ua 1.25v) (c_ t_delay dly ? ? when the ctl input is high (0.65 vin to vin), the mos between src and gsou t turns on and sets the output voltage of gsout equal to src. when the ctl input is low (0 to 0.25 vin), the mos between gsout and re turns on, and gsout will be discharged down to re voltage by a slope decided by the exte rnal resistor (r_re) and capacitor (c_gso). to adjust a slope, the following setting val ue is recommended; for resistor (r_re):200 ? - 5.1k ? , for capacitor (c_gso):less than 0.1uf. it may cause the efficiency aggrav ation by setting out of this range. the voltage ? v that gsout discharges during the time (t_wl) when ct l input is low can be calculated using the following formula. [v] r_ c_ t_ exp 1 src ? v re gso wl ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? ? ? ? ? but the loss occurs when c_gso is added. the loss ? p can be calculated using the following formula. [v] c_ v ctl) frequency( ? p 2 gso ? ? ? fig.30 gate shading i/o waveform if the gate shading function will not be used, the src, re, and ct l must be pulled-down by a resistor or connected to gnd. and the dly, please connect capacitor because there is the concern such as noises. downloaded from: http:///
datasheet d a t a s h e e t 19/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 here, f is the switching frequency and resr is esr of output capacitor. [v] how to select parts of application (1-1) setting the output l constant (boost converter) the coil to use for output is decided by the rating current i lr and input current maximum value i inmax of the coil. adjust so that i inmax + ? i l does not reach the rating current value i lr . in addition, become the discontinuous condition mode (dcm) when il reaches 0ma. as for the section which dcm and continuous condition mode (ccm) are replaced by, jitter properties turn worse. adjust the coil so that i inmax - ? i l does not reach the 0ma. ? i l can be obtained by the following equation. ? i l = 1 vin ? avdd - vin ? 1 l avdd f set with sufficient margin because the coil value may have the dispersion of ? 30%. if the coil current exceeds the rating current i lr of the coil, it may damage the ic internal element. BD81842MUV-M uses the current mode dc/dc converter cont rol and has the optimized design at the coil value. a coil inductance (l) of 4.7 uh to 22 uh is recommended from viewpoints of electric power efficiency, response, and stability. (2) output capacity settings for the capacitor to use for the output, select the capacitor which has the larger value in the ripple voltage v pp allowance value and the drop voltage allowance value at the time of sudden load change. output ripple voltage is decided by the following equation. perform setting so that the voltage is within the allowable ripple voltage range. for the drop voltage during sudden load change; v dr , please perform the rough calculation by the following equation. v dr = ? i ? 10 us [v] co however, 10 ? s is the rough calculation value of the dc/dc response speed. please set the capacitance considering the sufficient margin so that these two values are within the standard value range. (3) selecting the input capacitor since the peak current flows between the input and output at t he dc/dc converter, a capacitor is required to install at the input side. for the reason, the low esr capacitor is recommended as an input capacitor which has the value more than 10 ? f and less than 100 m ? . if a capacitor out of this range is selected, the excessive ripple voltage is superposed on the input voltage, accordingly it may cause the malfunction of ic. however these conditions may vary according to the load current, input voltage, output voltage, inductance and switching frequency. be sure to perform the margin check using the actual product. ? v pp = i lmax ? r esr + 1 ? vin ? (i lmax - ? i l ) fco avdd 2 il i lr l vin i l avdd co i inmax average current figure 31. coil current waveform figure 32. output application circuit diagram [a] here, f is the switching frequency. i inmax + i l should not reach the rating value level i inmax - i l should not reach the 0m a downloaded from: http:///
datasheet d a t a s h e e t 20/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 (4) setting r c , c c of the phase compensation circuit in the current mode control, since the coil current is controlled, a pole (phase lag) made by the cr filter composed of the output capacitor and load resistor will be created in the low frequency range, and a zero (phase lead) by the output capacitor and esr of capacitor will be created in the high frequency range. in this case, to cancel the pole of the power amplifier, it is easy to compensate by adding the zero point with c c and r c to the output from the error amp as shown in the illustration. open loop gain characteristics pole at the power amplification stage when the output current reduces, the load resistance r o increases and the pole frequency lowers. error amp phase compensation characteristics zero at the power amplification stage when the output capacitor is set larger, the pole frequency lowers but the zero frequency will not change. (this is because the capacitor esr becomes 1/2 when the capacitor becomes 2 times.) it is possible to realize the stable feedback loop by canceling the pole fp(min.), which is created by the output capacitor and load resistor, with cr zero compensation of the error amp as shown below. fz(amp.) = fp(min.) 1 = 1 2 ? ? rc ? cc 2 ? ? romax ? co 1 fp = 2 ? ? r o ? c o 1 fz(esr) = 2 ? ? e sr ? c o 1 fp(min) = 2 ? ? r omax ? c o [hz] ? at light load 1 fz(max) = 2 ? ? r omin ? c o [hz] ? at heavy load 1 fp(amp.) = 2 ? ? r c ? c c fp(min) fp(max) fz(esr) a 0 -90 0 gain [db] phase [deg] l out min l out max 0 0 a -90 gain [db] phase [deg] figure 33. gain vs phase figure 34. application circuit diagram l rc cc cin vin gnd,pgnd sw comp co esr ro vin a vdd [hz] [hz] [hz] [hz] downloaded from: http:///
datasheet d a t a s h e e t 21/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 (5) design of the feedback resistor constant refer to the following equation to set the feedback resistor. as the setting range, 6.8 k ? to 330 k ? is recommended. if the resistor is set lower than a 6.8 k ? , it causes the reduction of power efficiency. if it is set more than 330 k ? , the offset voltage becomes larger by the input bias current 0.1 a(typ.) in the internal error amplifier. (6) positive-side charge pump settings the ic incorporates a charge pump controller, thus making it possible to generate stable gate voltage. the output voltage is determined by the following formula. as the setting range, 6.8 k ? to 330 k ? is recommended. if the resistor is set lower than a 6.8k ? , it causes the reduction of power efficiency. if it is set more than 330 k ? , the offset voltage becomes larger by the input bias current 0.1 a (typ.) in the internal error amp. in order to prevent output voltage overshooting, add capacitor c_src_u in parallel with r_src_u. the recommended capacitance is 10 pf to 4700 pf. but please enough evaluate with the actual model because adjustments in the application may be necessary. please meet the following condition about the number of the steps of the charge pump. in addition, confirm with an actual model for the last time. because the loss is increase when a calculation result is the small, please be careful. ?? 1 x vf 2n - x avdd 1 n src ? ? here, n is the steps of charge pum p, vf is the forward voltage of diode. avdd = r_avd_u + r_avd_d ? fb [v] r_avd_d src = r_src_u + r_src_d ? fbp [v] r_src_d a vdd r _ avd_u r_avd_d err reference voltage 1.25 v fb 17 figure 35. application circuit diagram fbp src r_src_u r_src_d err reference voltage 1.25 v c_src_u 10pf to 4700 pf figure 36. application circuit diagram 10 downloaded from: http:///
datasheet d a t a s h e e t 22/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 (7) negative-side charge pump settings this ic incorporates a charge pump controller for negative voltage, thus making it possible to generate stable gate voltage. the output voltage is determined by the following formula. as the setting range, 6.8 k ? to 330 k ? is recommended. if the resistor is set lower than a 6.8 k ? , it causes the reduction of power efficiency. if it is set more than 330 k ? , the offset voltage becomes larger by the input bias current 0.1 a (typ.) in the internal error amp. in order to prevent output voltage overshooting, insert capacitor c_vgl_u in parallel with r_vgl_u. the recommended capacitance is 10 pf to 4700 pf. but please enough evaluate with the actual model because adjustments in the application may be necessary. please meet the following condition about the number of the steps of the charge pump. in addition, confirm with an actual model for the last time. because the loss is increase when a calculation result is the small, please be careful. 1 ) x vf 2n - x avdd n ( - vgl - ? here, n is the steps of charge pum p, vf is the forward voltage of diode. (8) vcom amplifier block vcom amplifier is a rail-to-rail high slew rate operational amplifier which has 0v - avdd voltage (the 1pin (inp) input voltage) as an input and output voltage range. when add a capacitor to output, 0.1uf C 10uf is recommended for the reason of stability. figure 38. application circuit diagram v gl = (fbn vref) r_vgl_u + fbn [v] r_vgl_d vgl r _ vgl_u r _ vgl_d err n c_vgl_u 10 pf to 4700 pf 0.265v 11 vref figure 37. application circuit diagram 12 fb + v v v downloaded from: http:///
datasheet d a t a s h e e t 23/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 (9) process of unused function when gate shading function is not used, please pr oceed each pin (src, re, ctl, dly) as follows. figure 39. application circuit when vcom function is not used, please proceed each pin (inp, inn, vcom) as follows. figure 40. application circuit ly sr gsout resw pgn pgn fb omp rstin agn2 vin rn tl rst fbp fbn vref inp inn vom agn1 av rp sr gsout 1k vin av 10v/0.5amax tk slf7055t-100m2r5(10h,2.5a) vin 3.3v vgl -7.1v/20ma max tl sr vom 5.5v rst rsx301la-30 10uf 10uf 10uf 10uf 10uf 91k 13k 24k 2.2nf 10k 10k 10k 1uf 120k 1uf 16k 0.22f 1uf 0.1uf 10k 150k 1uf 0.1uf 0.1uf 0.1uf 1uf 22k 18k 33nf av av a227 a227 a227 20v/20ma max 12 3 4 5 6 78 910 1112 1817 16 15 14 13 24 23 22 21 20 19 f pgn1 pgn2 av rst vgl sr vom gsout sr tl ly sr gsout resw pgn pgn fb omp rstin agn2 vin rn tl rst fbp fbn vref inp inn vom agn1 av rp sr gsout 1k vin av 10v/0.5amax tk slf7055t-100m2r5(10h,2.5a) vin 3.3v vgl -7.1v/20ma max tl sr vom 5.5v rst rsx301la-30 10uf 10uf 10uf 10uf 10uf 91k 13k 24k 2.2nf 10k 10k 10k 1uf 120k 1uf 16k 0.22f 1uf 0.1uf 10k 150k 1uf 0.1uf 0.1uf 0.1uf 1uf 22k 18k 33nf av av a227 a227 a227 20v/20ma max 12 3 4 5 6 78 910 1112 1817 16 15 14 13 24 23 22 21 20 19 f pgn1 pgn2 av rst vgl sr vom the src, re, and ctl must be pulled-down by a resistor (0 ? -10 k ? ) or connected to gnd. the dly, please connect capacitor because there is the concern such as noises. the inp must be pulled-down by a resistor (0 ? -10 k ? ) or connected to gnd. downloaded from: http:///
datasheet d a t a s h e e t 24/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 pcb layout guide gnd wiring pattern the high current gnd (pgnd) should be wired thick. to r educe line impedance, the gnd lines must be as short and thick as possible and uses few via. therefore design at pcb board four layers or above is recommended. (please use the middle layer as gnd shielding and directly connect each gnd.) in the case of two layers or less at pcb board designs, please enough confirm with the actual model about the heat and the noise with care to a gnd wiring. switching-line wiring pattern the wiring from switching line (sw pin) of dc/dc converter to inductor and diode must be as short and thick as possible. if a wiring is long, ringing by switching increases, and the voltage over the resistance of this ic might be generated. please note that switching line does not vary pcb layer. switching line and wiring easily affected by noise such as feedback line or comp line must be placed separately. switching noise spread may cause the lack of operation stability. in case the multi-layer pcb board, please note that a switching line and a line easily affected by noise or the external components are not adjacent between layers. drawing gnd shield line between switching line and these lines easily affected by noise is recommended if these lines are placed close. power supply voltage line wiring pattern for power supply voltage (vin) and internal reference voltage (vref), place smooth capacitor nearby ic pin. especially, vin is a power supply line of internal mosfet for boost dc/dc, placing capacitor at distance within 2mm from pin is needed. in addition, wire the vin line by thickness more than 3mm. furthermore, insert the resistance (rc filter formation) on vin line and become stronger in a power supply change. please note that smooth capacitor does not vary pcb layer. the figure 41 shows an application circuit on the basis of the basic pcb layout pattern guideline mentioned above. ? bold line: high current line ? blue line(two dots and dashed line): wiring easily affected by noise ? red line (dashed line): noise source line such as switching line figure 41. application circuit downloaded from: http:///
datasheet d a t a s h e e t 25/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 recommended layout pattern top layer 2 nd layer 3 rd layer bottom layer figure 42. recommended layout pattern emc layout guide introduce the plan that can design on the pcb as emc measures. measures by the board pattern wire avdd line briefly thickly. wire the current loop of boost dc/dc briefly thickly. measures by the external component insert a common mode filter or a beads coil in the avdd line and form the emc filter. place output capacitor and small capacitor (10pf - 1,000pf) in parallel. insert the snubber circuit in sw pin. (assumed the efficiency becomes worse) figure 43. application circuit figure 44. current loop gsout resw pgn pgn fb gsout 1k vin av 10v/0.5amax slf7055t-100m2r5(10h,2.5a) rsx301la-30 10uf 10uf 10uf 10uf 10uf 91k 13k 1817 16 22 1 20 19 pgn2 agnd pgnd pgnd pgnd vin connect pgnd and agnd far from noise line. top laye r 2nd laye r 3rd laye r bottom laye r downloaded from: http:///
datasheet d a t a s h e e t 26/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 i/o equivalent circuit diagrams (except for 4.agnd1, 14.agnd2, 18.pgnd1, 19.pgnd2) 1.inp 2.inn 3.vcom 6.drp 7.drn 5.avdd 8.ctl 9.rst 10.fbp 11.fbn 15.rstin 12.vref 13.vin 16.comp 17.fb 20.sw 21.re 22.gsout 23.src 24.dly avdd avdd agnd1 avdd avdd agnd1 agnd1 agnd2 pgnd1, pgnd2 src agnd2 vin agnd2 agnd2 src re vin agnd2 vin agnd2 agnd2 vin agnd2 vin vin agnd2 agnd2 agnd2 agnd2 vin agnd2 vin agnd2 vin agnd2 agnd2 agnd2 downloaded from: http:///
datasheet d a t a s h e e t 27/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 operation notes 1. reverse connection of power supply connecting the power supply in reverse polarity can damage the ic. take precautions against reverse polarity when connecting the power supply, such as mounting an external diode between the power supply and the ics powe r supply pins. 2. power supply lines design the pcb layout pattern to provide low impedance supply lines. separate the ground and supply lines of the digital and analog blocks to prevent noise in the ground and supply lines of the digital bl ock from affecting the analog block. furthermore, connect a capacitor to ground at all power supply pins. consider the effect of temperature and aging on the capacitance value when using electrolytic capacitors. 3. ground voltage ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. 4. ground wiring pattern when using both small-signal and large-current ground traces , the two ground traces should be routed separately but connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal ground caused by large currents. also ensure that the ground traces of external components do not cause variations on the ground voltage. the ground lines must be as short and thick as possible to reduce line impedance. 5. thermal consideration should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. in case of exceeding this absolute maximum rating, increase the board size and copper area to prevent exceeding the pd rating. 6. recommended operating conditions these conditions represent a range within which the expec ted characteristics of the ic can be approximately obtained. the electrical characteristics are guar anteed under the conditions of each parameter. 7. inrush current when power is first supplied to the ic, it is possible that the internal logic may be unstable and inrush current may flow instantaneously due to the internal powering sequence and delays, especially if the ic has more than one power supply. therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing of connections. 8. operation under strong electromagnetic field operating the ic in the presence of a strong electromagnetic field may cause the ic to malfunction. 9. testing on application boards when testing the ic on an application board, connecting a capacitor directly to a low-impedance output pin may subject the ic to stress. always discharge capacitors completely after each process or step. the ics power supply should always be turned off completely before connecting or removing it from the test setup during the inspection process. to prevent damage from static discharge, ground the ic during assembly and use similar precautions during transport and storage. 10. inter-pin short and mounting errors ensure that the direction and position are correct when mounting the ic on the pcb. incorrect mounting may result in damaging the ic. avoid nearby pins being shorted to each ot her especially to ground, power supply and output pin. inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembly to name a few. 11. unused input pins input pins of an ic are often connected to the gate of a mos transistor. the gate has extremely high impedance and extremely low capacitance. if left unconnected, the elec tric field from the outside can easily charge it. the small charge acquired in this way is enough to produce a signifi cant effect on the conduction through the transistor and cause unexpected operation of the ic. so unless otherwise specified, unused input pins should be connected to the power supply or ground line. downloaded from: http:///
datasheet d a t a s h e e t 28/31 BD81842MUV-M tsz02201-0313aaf00540-1-2 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 23. jun. 2016 rev.002 operational notes C continued 12. regarding the input pin of the ic this monolithic ic contains p+ isolation and p substrat e layers between adjacent elements in order to keep them isolated. p-n junctions are formed at the intersection of t he p layers with the n layers of other elements, creating a parasitic diode or transistor. for example (refer to figure below): when gnd > pin a and gnd > pin b, the p-n junction operates as a parasitic diode. when gnd > pin b, the p-n junction operates as a parasitic transistor. parasitic diodes inevitably occur in the structure of the ic. the operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the gnd voltage to an input pin (and thus to the p substrate) should be avoided. figure 45. example of monolithic ic structure 13. ceramic capacitor when using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with temperature and the decrease in nominal capacitance due to dc bias and others. 14. area of safe operation (aso) operate the ic such that the output voltage, output current, and power dissipation are all within the area of safe operation (aso). 15. thermal shutdown circuit(tsd) this ic has a built-in thermal shutdown circuit that pr events heat damage to the ic. normal operation should always be within the ics power dissipation rating. if however the rating is exceeded for a continued period, the junction temperature (tj) will rise which will activate the tsd circuit that will turn off all output pins. when the tj falls below the tsd threshold, the circuits are automatically restored to normal operation. note that the tsd circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the tsd circuit be used in a set desi gn or for any purpose other than protecting the ic from heat damage. 16. over current protection circuit (ocp) this ic incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. this protection circuit is effective in preventing damage due to sudden and unexpected incidents. however, the ic should not be used in applications characterized by continuous operation or transitioning of the protection circuit. downloaded from: http:///
datasheet d a t a s h e e t 29/31 tsz02201-0313aaf00540-1-2 ? 2015 rohm co., ltd. all rights reserved. 23. jun. 2016 rev.002 www.rohm.com tsz22111 ? 15 ? 001 BD81842MUV-M ordering information b d 8 1 8 4 2 m u v - me2 part number package muv:vqfn24sv4040 product rank m: for automotive packaging and forming specification e2: embossed tape and reel marking diagrams vqfn24sv4040 (top view) 81842 part number marking lot number 1pin mark downloaded from: http:///
datasheet d a t a s h e e t 30/31 tsz02201-0313aaf00540-1-2 ? 2015 rohm co., ltd. all rights reserved. 23. jun. 2016 rev.002 www.rohm.com tsz22111 ? 15 ? 001 BD81842MUV-M physical dimension, tape and reel information package name vqfn24sv4040 ? order quantity needs to be multiple of the minimum quantity. embossed carrier tape tapequantity direction of feed the direction is the 1pin of product is at the upper left when you hold reel on the left hand and you pull out the tape on the right hand 2500pcs e2 () direction of feed reel 1pin downloaded from: http:///
datasheet d a t a s h e e t 31/31 tsz02201-0313aaf00540-1-2 ? 2015 rohm co., ltd. all rights reserved. 23. jun. 2016 rev.002 www.rohm.com tsz22111 ? 15 ? 001 BD81842MUV-M revision history date revision changes 07.sep.2015 001 new release 23.jun.2016 002 p6 thermal resistance : footprints and traces 74.2mm 2 (square) ? 74.2mm x 74.2mm p25 add recommended layout pattern downloaded from: http:///
notice-paa-e rev.003 ? 201 5 rohm co., ltd. all rights reserved. notice precaution on using rohm products 1. if you intend to use our products in devices requiring extreme ly high reliability (such as medical equipment (note 1) , aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life , bodily injury or serious damage to property ( specific applications ), please consult with the rohm sales representative in advance. unless otherwise agreed in writin g by rohm in advance, rohm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any rohm s products for specific applications. (note1) medical equipment classification of the specific applic ations japan usa eu china class class class b class class ? class 2. rohm designs and manufactures its products subject to stri ct quality control system. however, semiconductor products can fail or malfunction at a certain rate. please be sure to implement, at your own responsibilities, adeq uate safety measures including but not limited to fail-safe desig n against the physical injury, damage to any property, whic h a failure or malfunction of our products may cause. the followi ng are examples of safety measures: [a] installation of protection circuits or other protective devic es to improve system safety [b] installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. our products are no t designed under any special or extraordinary environments or conditions, as exemplified below . accordingly, rohm shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any rohms products under any special or extraordinary environments or conditions. if you intend to use our products under any special or extraordinary environments or c onditions (as exemplified below), your independent verification and confirmation of product performance, reliabil ity, etc, prior to use, must be necessary: [a] use of our products in any types of liquid, including water, oils, chemicals, and organi c solvents [b] use of our products outdoors or in places where the products are exposed to direct sunlight or dust [c] use of our products in places where the products are e xposed to sea wind or corrosive gases, including cl 2 , h 2 s, nh 3 , so 2 , and no 2 [d] use of our products in places where the products are exposed t o static electricity or electromagnetic waves [e] use of our products in proximity to heat-producing component s, plastic cords, or other flammable items [f] sealing or coating our products with resin or other coating materials [g] use of our products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or washing our products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] use of the products in places subject to dew condensation 4. the products are not subject to radiation-proof design. 5. please verify and confirm characteristics of the final or mou nted products in using the products. 6 . in particular, if a transient load (a large amount of load appl ied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mou nting is strongly recommended. avoid applying power exceeding normal rated power; exceeding the power rating u nder steady-state loading condition may negatively affec t product performance and reliability. 7. de -rate power dissipation depending on ambient temperature. wh en used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8 . confirm that operation temperature is within the specified range desc ribed in the product specification. 9 . rohm shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. precaution for mounting / circuit board design 1. when a highly active halogenous (chlorine, bromine, etc .) flux is used, the residue of flux may negatively affect prod uct performance and reliability. 2. in principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method mus t be used on a through hole mount products. i f the flow soldering method is preferred on a surface-mount p roducts, please consult with th e rohm representative in advance. for details, please refer to rohm mounting specification downloaded from: http:///
notice-paa-e rev.003 ? 201 5 rohm co., ltd. all rights reserved. precautions regarding application examples and external circuits 1. if change is made to the constant of an external circuit, p lease allow a sufficient margin considering variations o f the characteristics of the products and external components, inc luding transient characteristics, as well as static characteristics. 2. you agree that application notes, reference designs, and a ssociated data and information contain ed in this document are presented only as guidance for products use. therefore, i n case you use such information, you are solely responsible for it and you must exercise your own independ ent verification and judgment in the use of such information contained in this document. rohm shall not be in any way respon sible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such informat ion. precaution for electrostatic this product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. please take p roper caution in your manufacturing process and storage so t hat voltage exceeding the products maximum rating will not be applied to products. please take special care under dry co ndition (e.g. grounding of human body / equipment / solder iro n, isolation from charged objects, setting of ionizer, friction prevention and temperature / humidity control). precaution for storage / transportation 1. product performance and soldered connections may deteriorate if the products are stored in the places where: [a] the products are exposed to sea winds or corrosive gases, in cluding cl2, h2s, nh3, so2, and no2 [b] the temperature or humidity exceeds those recommended by rohm [c] the products are exposed to direct sunshine or condensation [d] the products are exposed to high electrostatic 2. even under rohm recommended storage condition, solderabil ity of products out of recommended storage time period may be degraded. it is strongly recommended to confirm so lderability before using products of which storage time is exceeding the recommended storage time period. 3. store / transport cartons in the correct direction, which is indi cated on a carton with a symbol. otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. use products within the specified time after opening a humi dity barrier bag. baking is required before using products of which storage time is exceeding the recommended storage tim e period. precaution for product label a two-dimensional barcode printed on rohm products label is f or rohm s internal use only. precaution for disposition when disposing products please dispose them properly usi ng an authorized industry waste company. precaution for foreign exchange and foreign trade act since concerned goods might be fallen under listed items of export control prescribed by foreign exchange and foreign trade act, please consult with rohm in case of export. precaution regarding intellectual property rights 1. all information and data including but not limited to appl ication example contained in this document is for reference only. rohm does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. 2. rohm shall not have any obligations where the claims, a ctions or demands arising from the combination of the products with other articles such as components, circuits, systems or ex ternal equipment (including software). 3. no license, expressly or implied, is granted hereby under any inte llectual property rights or other rights of rohm or any third parties with respect to the products or the information contai ned in this document. provided, however, that rohm will not assert its intellectual property rights or other rights a gainst you or your customers to the extent necessary to manufacture or sell products containing the products, subject to th e terms and conditions herein. other precaution 1. this document may not be reprinted or reproduced, in whole or in p art, without prior written consent of rohm. 2. the products may not be disassembled, converted, modified , reproduced or otherwise changed without prior written consent of rohm. 3. in no event shall you use in any way whatsoever the pr oducts and the related technical information contained in the products or this document for any military purposes, includi ng but not limited to, the development of mass-destruction weapons. 4. the proper names of companies or products described in this document are trademarks or registered trademarks of rohm, its affiliated companies or third parties. downloaded from: http:///
datasheet datasheet notice ? we rev.001 ? 2015 rohm co., ltd. all rights reserved. general precaution 1. before you use our pro ducts, you are requested to care fully read this document and fully understand its contents. rohm shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny rohms products against warning, caution or note contained in this document. 2. all information contained in this docume nt is current as of the issuing date and subj ec t to change without any prior notice. before purchasing or using rohms products, please confirm the la test information with a rohm sale s representative. 3. the information contained in this doc ument is provi ded on an as is basis and rohm does not warrant that all information contained in this document is accurate an d/or error-free. rohm shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. downloaded from: http:///

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